Title :
GaAs cryo-cooled LNA for C-band radioastronomy applications
Author :
Ciccognani, W. ; Paolo, F. Di ; Giannini, F. ; Limiti, E. ; Longhi, P.E. ; Serino, A.
fDate :
4/13/2006 12:00:00 AM
Abstract :
The design procedure and measurements of a C-band high-performance GaAs cryo-cooled low noise amplifier (LNA) are presented. The latter provides 30 dB gain, a noise figure (NF) lower than 0.12 dB (i.e. 8 K equivalent noise temperature) at 25 K operating temperature, with 35 mW DC bias power only. An appropriate scaling of the device gate periphery has been adopted to trade-off the LNA´s NF and DC power consumption.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; cryogenic electronics; field effect MMIC; gallium arsenide; low noise amplifiers; radiotelescopes; 25 K; 30 dB; 35 mW; DC power consumption; GaAs; LNA; MMIC; cryo-cooled low noise amplifiers; device gate periphery scaling; noise figure; pHEMT technology; radioastronomy applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060710