DocumentCode
920046
Title
GaAs cryo-cooled LNA for C-band radioastronomy applications
Author
Ciccognani, W. ; Paolo, F. Di ; Giannini, F. ; Limiti, E. ; Longhi, P.E. ; Serino, A.
Volume
42
Issue
8
fYear
2006
fDate
4/13/2006 12:00:00 AM
Firstpage
471
Lastpage
472
Abstract
The design procedure and measurements of a C-band high-performance GaAs cryo-cooled low noise amplifier (LNA) are presented. The latter provides 30 dB gain, a noise figure (NF) lower than 0.12 dB (i.e. 8 K equivalent noise temperature) at 25 K operating temperature, with 35 mW DC bias power only. An appropriate scaling of the device gate periphery has been adopted to trade-off the LNA´s NF and DC power consumption.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; cryogenic electronics; field effect MMIC; gallium arsenide; low noise amplifiers; radiotelescopes; 25 K; 30 dB; 35 mW; DC power consumption; GaAs; LNA; MMIC; cryo-cooled low noise amplifiers; device gate periphery scaling; noise figure; pHEMT technology; radioastronomy applications;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20060710
Filename
1624754
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