Title :
Broad-Band Internal Matching of Microwave Power GaAs MESFET´s
Author :
Honjo, Kazuhiko ; Takayama, Yoichiro ; Higashisaka, Asamitsu
fDate :
1/1/1979 12:00:00 AM
Abstract :
Broad-band internal matching techniques for high-power GaAS MESFET´s at C band have been developed adopting novel circuit configurations and large-signal characterizations in the circuit design. The lumped-element two-section input matching network is formed on a single ceramic plate with a high dielectric constant. The semidistributed single-section output circuit is formed in microstrip pattern on an alumina plate. The internally matched GaAs FET with 11200-mu m total gate width developed has a 2.5-W power output at 1-dB gain compression and a 4.4-W saturated power output with 5.5-dB linear gain from 4.2 to 7.2 GHz without external matching. The FET internally matched from 4.5 to 6.5 GHz exhibited 5-W saturated power output with 6-dB linear gain.
Keywords :
Bipolar transistors; Bonding; Ceramics; Circuit synthesis; FETs; Frequency; Gallium arsenide; Impedance matching; MESFET circuits; Scattering parameters;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1979.1129549