• DocumentCode
    920073
  • Title

    A Fast Low-Loss Microstrip p-i-n Phase Shifter

  • Author

    Glance, Bernard

  • Volume
    27
  • Issue
    1
  • fYear
    1979
  • fDate
    1/1/1979 12:00:00 AM
  • Firstpage
    14
  • Lastpage
    16
  • Abstract
    A 4-bit p-i-n phase shifter with low RF attentuation, fast switching time, and low switching power requirements is described. The circuit, made in microstripline, consists of four cells giving phase shifts of 180, 90, 45, and 22.5deg, respectively. Each cell consists of a 3-dB coupler loaded by two p-i-n diodes. The transmission loss is 1.6 dB ± 0.2 dB over the operating bandwidth of 11.7-12.2 GHz for a biasing current of only 5 mA/cell. Switching time between phase states is 1 ns.
  • Keywords
    Circuits; Electrons; Gallium arsenide; Microstrip; Microwave FETs; Microwave oscillators; P-i-n diodes; PIN photodiodes; Phase shifters; Radio frequency;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1979.1129551
  • Filename
    1129551
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=920073