DocumentCode :
920073
Title :
A Fast Low-Loss Microstrip p-i-n Phase Shifter
Author :
Glance, Bernard
Volume :
27
Issue :
1
fYear :
1979
fDate :
1/1/1979 12:00:00 AM
Firstpage :
14
Lastpage :
16
Abstract :
A 4-bit p-i-n phase shifter with low RF attentuation, fast switching time, and low switching power requirements is described. The circuit, made in microstripline, consists of four cells giving phase shifts of 180, 90, 45, and 22.5deg, respectively. Each cell consists of a 3-dB coupler loaded by two p-i-n diodes. The transmission loss is 1.6 dB ± 0.2 dB over the operating bandwidth of 11.7-12.2 GHz for a biasing current of only 5 mA/cell. Switching time between phase states is 1 ns.
Keywords :
Circuits; Electrons; Gallium arsenide; Microstrip; Microwave FETs; Microwave oscillators; P-i-n diodes; PIN photodiodes; Phase shifters; Radio frequency;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1979.1129551
Filename :
1129551
Link To Document :
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