CW 140 W recessed-gate AlGaN/GaN MISFET with field-modulating plate

Author

Nakayama, T. ; Ando, Y. ; Okamoto, Y. ; Inoue, T. ; Miyamoto, H.

Author_Institution

R&D Assoc. for Future Electron Devices, NEC Corp., Otsu Shiga, Japan

Volume

42

Issue

8

fYear

2006

fDate

4/13/2006 12:00:00 AM

Firstpage

489

Lastpage

490

Abstract

The recessed-gate AlGaN/GaN metal-insulator-semiconductor (MIS) FET with a field-modulating plate (FP) has been fabricated. At a reverse bias condition, gate-leakage current is 10^-9 A/mm and gate-drain breakdown voltage is over 200 V, which is four times higher than that of a conventional AlGaN/GaN MISFET without an FP. At 2 GHz, a 48 mm-wide recessed MIS-FP-FET demonstrated a CW saturated output power of 141 W (2.9 W/mm), a linear gain of 7.6 dB and a power-added efficiency of 56% with a drain bias of 40 V. A total CW output power of 141 W is the highest ever achieved for any III-V compound-semiconductor MISFETs.

Keywords

III-V semiconductors; MISFET; UHF field effect transistors; aluminium compounds; gallium compounds; leakage currents; power field effect transistors; wide band gap semiconductors; 140 W; 141 W; 2 GHz; 40 V; 48 mm; 7.6 dB; AlGaN-GaN; CW saturated output power; III-V compound-semiconductor MISFET; field-modulating plate; gate-drain breakdown voltage; gate-leakage current; linear gain; power-added efficiency; recessed-gate metal-insulator-semiconductor FET;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20064384

Filename

1624765