Title :
Formation of 0.05- mu m p/sup +/-n and n/sup +/-p junctions by very low (<500 eV) ion implantation
Author :
Bousetta, Ali ; van den Berg, J.A. ; Armour, D.G.
Author_Institution :
Dept. of Electr. Eng., Salford Univ., UK
fDate :
5/1/1992 12:00:00 AM
Abstract :
The current-voltage (I-V) characteristics of ultrashallow p/sup +/-n and n/sup +/-p diodes, obtained using very-low-energy (<500-eV) implantation of B and As, are presented. the p/sup +/-n junctions were formed by implanting B/sup +/ ions into n-type Si
Keywords :
arsenic; boron; doping profiles; elemental semiconductors; ion implantation; leakage currents; p-n homojunctions; secondary ion mass spectra; semiconductor doping; silicon; /sup 28/Si isotopic layer; 0.05 micron; 2*10/sup -11/ A; 200 eV; 500 eV; 8*10/sup -12/ A; 800 degC; I-V characteristics; RTA; SIMS; Si:As; Si:B; depth profiles; ion implantation; ion-beam deposition; low energy implant; n/sup +/-p junctions; p/sup +/-n junctions; rapid thermal annealing; reverse bias leakage current; secondary ion mass spectrometry; ultrashallow diodes; Amorphous materials; Boron; Crystallization; Ion implantation; Leakage current; Molecular beam epitaxial growth; Rapid thermal annealing; Semiconductor diodes; Silicon; Temperature;
Journal_Title :
Electron Device Letters, IEEE
