• DocumentCode
    920356
  • Title

    Light-sensitive metal-semi-insulator-n+GaAs diodes

  • Author

    Yeh, C. ; Shabde, S.N.

  • Volume
    59
  • Issue
    11
  • fYear
    1971
  • Firstpage
    1636
  • Lastpage
    1637
  • Abstract
    The infrared detection property of a new type of Schottky-barrier GaAs epitaxial diode is described. When the diode is forward biased at a few volts it exhibits extreme sensitivity to infrared radiation of 0.895-µm wavelength. The detectivity is typically of the order of 1 to 5 × 1012cm(Hz)1/2/W and the response time is approximately 0.1 ms at room temperature. A physical model of this new device is proposed.
  • Keywords
    Bandwidth; Capacitance; Capacitance-voltage characteristics; Charge carrier density; Gallium arsenide; Insulation; Lighting; Schottky diodes; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1971.8514
  • Filename
    1450444
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=920356