• DocumentCode
    920455
  • Title

    Method of calculating high-frequency parameters of m.o.s. transistors in the nonpinchoff region

  • Author

    Rossel, P.

  • Author_Institution
    CNRS, Laboratoire d´Automatique et de ses Applications Spatiales, Toulouse, France
  • Volume
    8
  • Issue
    25
  • fYear
    1972
  • Firstpage
    614
  • Lastpage
    616
  • Abstract
    A new method of calculating high-frequency admittance parameters of m.o.s. transistors is proposed. Approximate analytical expressions are obtained which are in good agreement, at very high frequencies, with the exact computed solutions. The domain of validity of the frequency and bias conditions of the yij relations is given.
  • Keywords
    admittance; field effect transistors; MOST; admittance; high frequency parameters;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720445
  • Filename
    4235912
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=920455