DocumentCode :
920535
Title :
1/4 W continuous-wave Q band Gunn oscillator
Author :
Bullimore, E.D. ; Bradley, R.R. ; McGeehan, J.P. ; Myers, F.A.
Author_Institution :
Plessey Co., Allen Clark Research Centre, Towcester, UK
Volume :
8
Issue :
26
fYear :
1972
Firstpage :
629
Lastpage :
630
Abstract :
C.W. Gunn devices using integral-heatsink techniques have been produced with a power output of more than ¿ W at 31.5 GHz. Conversion efficiencies of up to 4.6% are reported. A tuning range greater than 8 GHz has been obtained.
Keywords :
Gunn oscillators; heat sinks; semiconductor device manufacture; solid-state microwave devices; 31.5 GHz; GaAs; Gunn oscillator; In-Ge-Ag contact; Q-band; heatsinks; integral heatsink technique; semiconductor device manufacture; solid state microwave devices; tuning;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19720454
Filename :
4235922
Link To Document :
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