73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

Author

Crabbe, Emmanuel F. ; Comfort, James H. ; Lee, Wai ; Cressler, John D. ; Meyerson, Bernard S. ; Megdanis, Andrew C. ; Sun, Jack Y C ; Stork, Johannes M C

Author_Institution

IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

13

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

259

Lastpage

261

Abstract

The authors report a thermal-cycle emitter process using phosphorus for the fabrication of self-aligned SiGe-base heterojunction bipolar transistors. The low thermal cycle results in extremely, narrow basewidths and preservation of lightly doped spacers in both the emitter-base and base-collector junctions for improved breakdown. Transistors with 35-nm basewidths were obtained with low emitter-base reverse leakage and a peak cutoff frequency of 73 GHz for an intrinsic base sheet resistance of 16 k Omega / Square Operator . Minimum NTL (nonthreshold logic) and ECL (emitter-coupled logic) gate delays of 28 and 34 ps, respectively were obtained with these devices.<>

Keywords

Ge-Si alloys; heterojunction bipolar transistors; phosphorus; semiconductor materials; solid-state microwave devices; 28 ps; 34 ps; 35 nm; 73 GHz; ECL gate delays; HBT; NTL gate delays; P doped polycrystalline Si; Si:P emitters; breakdown improvement; emitter-coupled logic; fabrication; heterojunction bipolar transistors; lightly doped spacers; narrow basewidths; nonthreshold logic; polysilicon emitters; self aligned SiGe base; thermal-cycle emitter process; Bipolar transistors; Boron; Cutoff frequency; Doping; Fabrication; Furnaces; Germanium silicon alloys; Heterojunction bipolar transistors; Rapid thermal annealing; Silicon germanium;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145046

Filename

145046