DocumentCode :
920589
Title :
Electrical Characterization of Transferred Electron Devices by a Novel Galvanomagnetic Technique
Author :
McBretney, J. ; Howes, M.J.
Volume :
27
Issue :
3
fYear :
1979
fDate :
3/1/1979 12:00:00 AM
Firstpage :
256
Lastpage :
265
Abstract :
A novel technique is described that utilizes a galvanomagnetic phenomenon for the characterization of transferred electron devices. It is shown that this technique offers important advantages over present techniques based on the use of dummy packages and thus represents a useful analytical tool for the optimum design of transferred electron amplifier and oscillator circuits.
Keywords :
Admittance measurement; Bonding; Equivalent circuits; Gallium arsenide; Gold; Gunn devices; Microwave devices; Microwave oscillators; Packaging; Wire;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1979.1129603
Filename :
1129603
Link To Document :
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