DocumentCode
920617
Title
Photodetection using photomagnetoelectric and Dember effects in gold-doped silicon
Author
Li, S.S.
Volume
59
Issue
12
fYear
1971
Firstpage
1719
Lastpage
1720
Abstract
Photodetection in the visible and near IR wavelength region using photomagneto-electric and Dember effects in gold-doped silicon has been demonstrated in this note. Response time tr of 0.2 µs and noise equivalent power (NEP) of 6 × 10-10for a photomagnetoelectric (PME) cell, and tr < 0.03 µs and NEP = 2.5 × 10-10for a Dember cell, were obtained from the present results.
Keywords
Circuit noise; Delay; Detectors; Gold; Magnetic circuits; Magnetic flux; Masers; Optical noise; Silicon; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1971.8536
Filename
1450466
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