DocumentCode
920618
Title
Measurements of the influence of the nd product on the Gunn effect
Author
Schlachetzki, Andreas ; Mause, Klaus
Author_Institution
Deutsche Bundespost, Forschungsinstitut, Darmstadt, West Germany
Volume
8
Issue
26
fYear
1972
Firstpage
640
Lastpage
642
Abstract
Measurements of the effect of the nd product on domain formation in planar Gunn devices on GaAs are reported. Starting at nd = 1012 cm¿2, the Gunn effect decreases to zero at nd = 1011 cm¿2.
Keywords
Gunn devices; electric current measurement; gallium arsenide; Electric current measurement; GaAs; Gunn devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720463
Filename
4235931
Link To Document