Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser

Author

Miller, L.M. ; Beernink, K.J. ; Verdeyen, J.T. ; Coleman, J.J. ; Hughes, J.J. ; Smith, G.M. ; Honig, J. ; Cockerill, T.M.

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

Volume

4

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

296

Lastpage

299

Abstract

InGaAs-GaAs-AlGaAs strained-layer distributed-feedback (DFB) ridge-waveguide lasers requiring a single metalorganic chemical vapor deposition (MOCVD) growth step are shown to operate in a single longitudinal mode up to 2.2*I/sub th/ with an antireflection (AR) coating applied to one facet under room temperature, pulsed conditions. A value of kL=0.33 has been determined from threshold gain calculations for coated and uncoated devices. Weak lateral optical confinement, provided by unpumped lateral gratings is demonstrated by the absence of antiguiding effects, and a real lateral index step of approximately 4*10/sup -3/ is determined from near-field emission patterns.<>

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; optical waveguides; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; DFB diode lasers; InGaAs-GaAs-AlGaAs; MOCVD; antireflection coating; growth step; lateral optical confinement; near-field emission patterns; pulsed conditions; real lateral index step; room temperature; semiconductors; single longitudinal mode; single metalorganic chemical vapor deposition; strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser; threshold gain calculations; unpumped lateral gratings; Chemical lasers; Chemical vapor deposition; Coatings; Laser modes; MOCVD; Optical devices; Optical pulses; Pulsed laser deposition; Stimulated emission; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.127192

Filename

127192