Title :
Temperature dependence of the properties of DBR mirrors used in surface normal optoelectronic devices
Author :
Dudley, J.J. ; Crawford, D.L. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
The variation in the center wavelength of distributed Bragg reflectors used in optoelectronic devices, such as surface emitting lasers and Fabry-Perot modulators, is measured as the temperature of the mirrors changes over the range 25 degrees C to 105 degrees C. An analytic expression for the shift in center wavelength with temperature is presented. The mirrors measured are made of InP/InGaAsP ( lambda /sub gap/=1.15 mu m), GaAs/AlAs, and Si/SiN/sub x/. The linear shifts in center wavelength are 0.110+or-0.003 nm/ degrees C, 0.087+or-0.003 nm/ degrees C, and 0.067+or-0.007 nm/ degrees C for the InP/InGaAsP, GaAs/AlAs, and Si/SiN mirrors, respectively. Based on these data, the change in penetration depth with temperature is calculated.<>
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser accessories; laser cavity resonators; mirrors; optical modulation; semiconductor junction lasers; silicon; silicon compounds; 1.15 micron; 25 to 105 degC; DBR mirrors; Fabry-Perot modulators; GaAs-AlAs; InP-InGaAsP; Si-SiN/sub x/; center wavelength; distributed Bragg reflectors; linear shifts; mirror temperature; optical testing; penetration depth; semiconductors; surface emitting lasers; surface normal optoelectronic devices; wavelength shift; Distributed Bragg reflectors; Gallium arsenide; Indium phosphide; Mirrors; Optoelectronic devices; Silicon compounds; Surface emitting lasers; Temperature dependence; Temperature measurement; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
