Title :
Strained InGaAs/GaAs quantum well constricted-mesa lasers and application in a vertical-twin-guide tunable laser
Author :
Chuang, Z.M. ; Scott, J.W. ; Young, D.B. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
Constricted-mesa semiconductor lasers containing a strained-layer InGaAs single-quantum-well-separate-confinement-heterostructure have been demonstrated. Very high etching selectivity between Al/sub x/Ga/sub 1-x/As (x=0.9) and Al/sub x/Ga/sub 1-x/As (x=<0.6) was achieved using diluted hydrofluoric acid to create a deeply undercut current confinement region, which enables a side contact for current injection. A process combining a self-aligned reactive ion etch and the undercut wet chemical etch has been developed for implementing a vertical twin-guide three-electrode tunable laser structure. Low-threshold currents for both single-guide devices with centered top contacts (5.2 mA) and twin-guide ones with side contacts (6.5 mA) were obtained.<>
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; laser tuning; optical waveguides; optical workshop techniques; semiconductor junction lasers; semiconductor technology; sputter etching; 5.2 mA; 6.5 mA; InGaAs-GaAs; centered top contacts; current injection; deeply undercut current confinement region; diluted hydrofluoric acid; high etching selectivity; low threshold currents; quantum well constricted-mesa lasers; self-aligned reactive ion etch; semiconductor lasers; side contact; single-guide devices; single-quantum-well-separate-confinement-heterostructure; strained-layer; undercut wet chemical etch; vertical twin-guide three-electrode tunable laser structure; Chemical lasers; Gallium arsenide; Indium gallium arsenide; Laser applications; Laser tuning; Optical waveguides; Quantum well lasers; Semiconductor lasers; Tunable circuits and devices; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
