Title :
Optimum r.f.-power transport in nd-limited gallium-arsenide travelling-wave amplifiers
Author_Institution :
AEG-Telefunken, Bereich Forschung und Entwicklung, Ulm, West Germany
Abstract :
A theoretical estimate of the power transport of a carrier wave in an nd-limited gallium-arsenide travelling-wave amplifier is presented, The nd being fixed, the thickness d can be optimised. The nd, being chosen to be 2 × 1011 cm-2, yields at 8.2 GHZ and 12 k V /cm bias field an optimum d of 5.3 ¿m, resulting in an r.f. power of 150 mW per centimetre of sample width.
Keywords :
gallium arsenide; microwave amplifiers; optimisation; solid-state microwave devices; 8.2 GHz; RF power transport; gallium arsenide; microwave amplifiers; negative differential conductivity semiconductors; optimisation; solid state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730009
