Title :
Electrically alterable avalanche-injection memory
Author :
Card, H.C. ; Worrall, A.G.
Author_Institution :
University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
Abstract :
In a 2-layer (SiO2¿Si3 N4) dielectric structure, avalanche-injected electrons are collected by a floating gate. It is shown that this charge can be removed from the floating gate by conduction through the Si3N4 layer.
Keywords :
electron avalanches; semiconductor storage devices; SiO2-Si3N4 dielectric structure; avalanche injection memory; electron avalanches; floating gate; semiconductor storage devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730010
