Title :
Effects of boron density on radiation resistance of copper-contaminated n/p type silicon solar cells
Author :
Kato, Yukio ; Usami, Akira
Author_Institution :
Nagoya Institute of Technology, Department of Electornics, Nagoya, Japan
Abstract :
The radiation-resistance properties of copper-contaminated n/p type cells are observed only when the copper concentration is larger than the boron density in the bulk region of the cells. The values of ¿(1/L2) on n/p type cells are not always proportional to the boron density in the bulk region.
Keywords :
boron; copper; semiconductor doping; solar cells; boron density effect; copper doped n/p type; radiation resistance; semiconductor doping; solar cells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730013
