• DocumentCode
    920790
  • Title

    Effects of boron density on radiation resistance of copper-contaminated n/p type silicon solar cells

  • Author

    Kato, Yukio ; Usami, Akira

  • Author_Institution
    Nagoya Institute of Technology, Department of Electornics, Nagoya, Japan
  • Volume
    9
  • Issue
    2
  • fYear
    1973
  • Firstpage
    18
  • Lastpage
    19
  • Abstract
    The radiation-resistance properties of copper-contaminated n/p type cells are observed only when the copper concentration is larger than the boron density in the bulk region of the cells. The values of ¿(1/L2) on n/p type cells are not always proportional to the boron density in the bulk region.
  • Keywords
    boron; copper; semiconductor doping; solar cells; boron density effect; copper doped n/p type; radiation resistance; semiconductor doping; solar cells;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730013
  • Filename
    4235948
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=920790