Title :
Characteristics of a gallium-arsenide travelling-wave amplifier with Schottky-barrier contacts
Author :
Kanbe, H. ; Shimizu, N. ; Kumabe, K.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Experimental results of the dependence of small-signal gain on bias voltages, applied to Schottky-barrier contacts which are r.f. input and output terminals of a gallium-arsenide travelling-wave amplifier are reported. In the optimum bias condition, a maximum net gain of 10 dB at 6.6 GHz in d.c. operation has been observed.
Keywords :
Schottky-barrier diodes; gallium arsenide; microwave amplifiers; solid-state microwave devices; 6.6 GHZ; Schottky barrier contacts; gallium arsenide; microwave amplifiers; small signal gain; solid state microwave devices; solid state travelling wave amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730020
