A new ´shift and ratio´ method for MOSFET channel-length extraction

Author

Taur, Yuan ; Zicherman, D.S. ; Lombardi, D.R. ; Restle, Phillip J. ; Hsu, C.H. ; Nanafi, H.I. ; Wordeman, Matthew R. ; Davari, Bijan ; Shahidi, Ghavam G.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

13

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

267

Lastpage

269

Abstract

A shift-and-ratio method for extracting MOSFET channel length is presented. In this method, channel mobility can be any function of gate voltage, and high source-drain resistance does not affect extraction results. It is shown to yield more accurate and consistent channel lengths for deep-submicrometer CMOS devices at room and low temperatures. It is also found that, for both nFET and pFET, the source-drain resistance is essentially independent of temperature from 300 to 77 K.<>

Keywords

CMOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; length measurement; MOSFET; channel length; channel mobility; deep-submicrometer CMOS devices; nFET; pFET; shift-and-ratio method; source-drain resistance; CMOS technology; Data mining; Electrical resistance measurement; Equations; Lithography; MOSFET circuits; Page description languages; Semiconductor device modeling; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145049

Filename

145049