Low-drive voltage intersectional waveguide optical switch using GaInAs/InP MQW structure

Author

Shimomura, Kazuhiko ; Aizawa, Takuya ; Tanaka, Narutomo ; Arai, Shigehisa

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

4

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

359

Lastpage

362

Abstract

A low-drive voltage intersectional waveguide optical switch using 1.6 mu m GaInAs/InP MQW (multiple quantum well) structure, which was fabricated by only one-step epitaxial growth of MQW structure followed by a one-step pattern etching of the waveguide is demonstrated. Extinction ratio at the straight port of 9.9 dB and that at the reflection port of 4.4 dB were obtained at an applied voltage of -4 V.<>

Keywords

III-V semiconductors; electro-optical devices; etching; gallium arsenide; indium compounds; integrated optics; optical switches; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor switches; vapour phase epitaxial growth; -4 V; 1.6 micron; GaInAs-InP; IR; MQW structure; applied voltage; extinction ratio; low-drive voltage intersectional waveguide optical switch; multiple quantum well; one-step epitaxial growth; one-step pattern etching; reflection port; semiconductors; straight port; Epitaxial growth; Erbium-doped fiber amplifier; Indium phosphide; Optical losses; Optical reflection; Optical switches; Optical waveguides; Quantum well devices; Refractive index; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.127213

Filename

127213