Title :
The effect of diode parameters on GaAs diode mixers in the 40¿400 GHz range
Author :
Keen, N.J. ; van der Ziel, A. ; Schmidt, R.R.
Author_Institution :
Max-Planck-Institut fÿr Radioastronomie, Bonn, West Germany
fDate :
6/1/1982 12:00:00 AM
Abstract :
Experimental measurements of noise temperature Tm and minimum conversion loss Lmin of a single-sideband Schottky-barrier diode mixer show the dependence: Tn = Tn0 (1 + f2/f20) and (Lmin0 ¿ 1) = (Lmin0 ¿ 1) (1 + f2/f20), where f0 = 110 GHz. It is demonstrated that these results can be interpreted in terms of the effect of diode parameters on the mixing process.
Keywords :
III-V semiconductors; Schottky-barrier diodes; electron device noise; mixers (circuits); solid-state microwave circuits; 40 GHz to 400 GHz; GaAs; III-V semiconductors; MM-waves; Q-band; Schottky-barrier diode mixer; V-band; diode parameters; minimum conversion loss; noise temperature; single-sideband;
Journal_Title :
Microwaves, Optics and Antennas, IEE Proceedings H
DOI :
10.1049/ip-h-1:19820022
