Title :
23-GHz Band GaAs MESFET Reflection-Type Amplifier
Author :
Tohyama, Hideki ; Mizuno, Hideki
fDate :
5/1/1979 12:00:00 AM
Abstract :
A new method is presented for applying a packaged GaAS MESFET to an amplifier in the frequency region above 20 GHz, using package resonance as a positive feedback element and operating GaAs MESFET as a negative resistance two-terminal device in a reflection-type amplifier. Experimentally, a 6-dB noise figure in the 23-GHz band and a 8-dB noise figure in the 27-GHz band have been achieved.
Keywords :
Coaxial components; FETs; Frequency; Gallium arsenide; Impedance measurement; Lead; MESFETs; Metallization; Packaging; Transducers;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1979.1129641
