DocumentCode
920993
Title
23-GHz Band GaAs MESFET Reflection-Type Amplifier
Author
Tohyama, Hideki ; Mizuno, Hideki
Volume
27
Issue
5
fYear
1979
fDate
5/1/1979 12:00:00 AM
Firstpage
408
Lastpage
415
Abstract
A new method is presented for applying a packaged GaAS MESFET to an amplifier in the frequency region above 20 GHz, using package resonance as a positive feedback element and operating GaAs MESFET as a negative resistance two-terminal device in a reflection-type amplifier. Experimentally, a 6-dB noise figure in the 23-GHz band and a 8-dB noise figure in the 27-GHz band have been achieved.
Keywords
Coaxial components; FETs; Frequency; Gallium arsenide; Impedance measurement; Lead; MESFETs; Metallization; Packaging; Transducers;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1979.1129641
Filename
1129641
Link To Document