An InGaAs/InP p-i-n-JFET OEIC with a wing-shaped p/sup +/-InP layer

Author

Park, Ki-Sung ; Oh, Kwang-Ryong ; Kim, Jeong-Soo ; Lee, Yong-Tag ; Kim, Sung-June ; Kwon, Young-Se

Author_Institution

Electron. & Telecommun. Res. Inst., Daedog Science Town, Daejeon, South Korea

Volume

4

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

387

Lastpage

389

Abstract

A receiver optoelectronic integrated circuit (OEIC) structure with an InGaAs p-i-n photodiode, InGaAs self-aligned junction FETs and a bias resistor has been fabricated on a semi-insulating InP substrate. The fabrication processes are highly compatible between the photodiode and the JFET, and reduction in FET gate length is achieved using anisotropic selective etching and a two-step organometallic vapor phase epitaxy (OMVPE) growth schedule. The 80- mu m diameter p-i-n detector exhibits a leakage current of 2 nA and a capacitance of about 0.35 pF at -5 V bias voltage. Extrinsic transconductance and a gate-source capacitance of the JFET are typically 45 mS/mm and 4.0 pF/mm at 0 V, respectively. The maximum voltage gain of the preamplifier is 12.5 and the bandwidth of the p-i-n amplifier OEIC is expected to be about 1.2 GHz.<>

Keywords

III-V semiconductors; etching; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; p-i-n diodes; photodiodes; semiconductor technology; vapour phase epitaxial growth; -5 V; 0.35 pF; 1.2 GHz; 2 nA; 80 micron; FET gate length; InGaAs; InP; JFET; OMVPE; anisotropic selective etching; bias resistor; bias voltage; fabrication processes; gate-source capacitance; maximum voltage gain; p-i-n amplifier OEIC; p-i-n detector; p-i-n photodiode; p-i-n-JFET OEIC; photodetectors; preamplifier; receiver optoelectronic integrated circuit; self-aligned junction FETs; semi-insulating InP substrate; semiconductors; transconductance; two-step organometallic vapor phase epitaxy; wing-shaped p/sup +/-InP layer; Capacitance; Indium gallium arsenide; Indium phosphide; JFETs; Optical device fabrication; Optoelectronic devices; PIN photodiodes; Resistors; Substrates; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.127223

Filename

127223