Integrated optical NOR gate

Author

Beyette, F.R., Jr. ; Geib, K.M. ; Feld, S.A. ; An, X. ; Hafich, M.J. ; Robinson, G.Y. ; Wilmsen, C.W.

Author_Institution

Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA

Volume

4

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

390

Lastpage

392

Abstract

A two-input optical NOR gate structure is proposed and demonstrated. The NOR gate is fabricated from a vertically integrated heterojunction phototransistor and light emitting diode InGaAs-InP structure grown by gas source molecular beam epitaxy. Operation up to 500 kHz is demonstrated for devices fabricated with 250- mu m*250- mu m mesas. Analysis indicates that operation at frequencies up to 50-100 MHz is possible for smaller mesa areas. ON/OFF optical contrast ratios as high as 30 were measured.<>

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; light emitting diodes; molecular beam epitaxial growth; optical logic; phototransistors; semiconductor technology; 50 to 100 MHz; InGaAs-InP; ON/OFF optical contrast ratios; gas source molecular beam epitaxy; light emitting diode; optical logic gate; semiconductor; two-input optical NOR gate structure; vertically integrated heterojunction phototransistor; Gold; Integrated optics; Light emitting diodes; Logic devices; Molecular beam epitaxial growth; Optical bistability; Optical devices; Optical interconnections; Optical sensors; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.127224

Filename

127224