Single-layer structure supporting both heterojunction bipolar transistor and surface-normal modulator

Author

Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

4

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

393

Lastpage

395

Abstract

The authors have produced a n-p-i (shallow quantum well)-n GaAs-AlGaAs layer structure from which either heterojunction bipolar transistors (HBTs) or surface-normal modulators may be fabricated, allowing single-growth integration of those devices for optical interconnects. The shallow quantum well region provides large electroabsorption while having no impedance to electron transport. The HBTs have a gain of 15. The modulators have a change in transmission from 30.7% to 50.1% for a change in bias from +1 V to -3V.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; electro-optical devices; electroabsorption; gallium arsenide; integrated optoelectronics; optical interconnections; optical modulation; -3 to 1 V; GaAs-AlGaAs layer structure; HBTs; electron transport; heterojunction bipolar transistor; large electroabsorption; n-p-i-n structure; optical interconnects; semiconductors; shallow quantum well; single-growth integration; surface-normal modulator; voltage bias change; Circuits; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Optical bistability; Optical crosstalk; Optical interconnections; Optical modulation; Optical sensors; Quantum well devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.127225

Filename

127225