Title :
Progress with CW IMPATT Diode Circuits at Microwave Frequencies
Author :
Gewartowski, James W.
fDate :
5/1/1979 12:00:00 AM
Abstract :
Progress with CW operation of IMPATT diodes at frequencies up to 20 GHz is reviewed, with emphasis on their circuit applications. Noise properties, stability criteria, and relliability are discussed. Comparisons are made between flat-profile and modified-Read-profile diodes. Examples of oscillator and amplifier circuits are presented.
Keywords :
Doping profiles; Gallium arsenide; Heat sinks; Impedance; Microwave circuits; Microwave frequencies; P-n junctions; Schottky diodes; Silicon; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1979.1129645
