Title :
Lateral Ga/sub 0.47/In/sub 0.53/As and GaAs p-i-n photodetectors by self-aligned diffusion
Author :
Tiwari, Sandip ; Burroughes, Jeremy ; Milshtein, Mark S. ; Tischler, Michael A. ; Wright, Steven L.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
Contact-self-aligned diffusion and compositional mixing has been utilized in the fabrication of lateral p-i-n photodetectors in Ga/sub 0.47/In/sub 0.53/As and GaAs for 1.3- and 0.85- mu m wavelength operation. The p-type contact and diffusion utilizes W(Zn) metallurgy and the n-type contact and diffusion utilizes MoGe/sub 2/ metallurgy. Bandwidths exceeding 7.5 and 18.0 GHz, respectively, have been obtained using these structures with bias voltages of approximately=5 V. The performance, ease of fabrication, and process compatibility make these devices suitable for integration in digital circuits employing field-effect transistors.<>
Keywords :
III-V semiconductors; diffusion in solids; gallium arsenide; indium compounds; infrared detectors; integrated optics; optical workshop techniques; p-i-n diodes; photodetectors; photodiodes; 0.85 micron; 1.3 micron; 18 GHz; 5 V; 7.5 GHz; Ga/sub 0.47/In/sub 0.53/As; GaAs; IR detectors; MoGe/sub 2/; W; Zn; bias voltages; compositional mixing; contact-self-aligned diffusion; diffusion in solids; digital circuits; electro-optical devices; field-effect transistors; metallurgy; n-type contact; p-i-n photodetectors; p-type contact; process compatibility; self-aligned diffusion; Bandwidth; Dark current; Fabrication; Gallium arsenide; Ohmic contacts; Optical surface waves; PIN photodiodes; Photodetectors; Substrates; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
