• DocumentCode
    921050
  • Title

    High Peak Pulse Power Silicon Double-Drift IMPATT Diodes

  • Author

    Pfund, George ; Curby, Rocky

  • Volume
    27
  • Issue
    5
  • fYear
    1979
  • fDate
    5/1/1979 12:00:00 AM
  • Firstpage
    450
  • Lastpage
    451
  • Abstract
    The performance of high peak pulse power silicon double-drift IMPATT devices operated at medium pulse repetition frequency are discussed. Several devices were characterized and achieved more than 45-W peak pulse power with 10-percent duty cycle at 9.7 GHz. Conversion efficiencies in the order of 9.7-11.2 percent were observed. These results compare with previously reported 19-W peak power, 10-percent duty-cycle, and 9.5-percent efficiency.
  • Keywords
    Electromagnetic heating; Frequency; Microwave devices; Pulse transformers; Semiconductor diodes; Silicon; Space vector pulse width modulation; Temperature; Thermal resistance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1979.1129647
  • Filename
    1129647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=921050