Title :
Computer optimisation of double-drift-region IMPATT diodes
Author :
Lekholm, Anders ; Mayr, Josef
Author_Institution :
Microwave Institute Foundation, Stockholm, Sweden
Abstract :
Design parameters for double-drift-region silicon IMPATT diodes for frequencies from 10 to 100 GHz are presented. The design is based on extensive large-signal computer simulations at one frequency of two different diode structures in a simple circuit. From these simulations, a simple design criterion was derived which permits the calculation of optimised impurity profiles for any desired frequency, with a small computer effort.
Keywords :
IMPATT diodes; computer-aided design; electronics applications of computers; optimisation; semiconductor doping; simulation; solid-state microwave devices; 10 to 100 GHZ; IMPATT diodes; Si; computer aided design; design criterion; double drift region; electronics applications of computers; optimisation; semiconductor doping; simulations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730046
