DocumentCode
921321
Title
Frequency response of HBTs as photodetectors
Author
Suematsu, Eiji ; Ogawa, Hiroyo
Author_Institution
ATR Opt. & Radio Commun. Res. Lab., Kyoto, Japan
Volume
3
Issue
7
fYear
1993
fDate
7/1/1993 12:00:00 AM
Firstpage
217
Lastpage
218
Abstract
The frequency response of HBT photodetectors fabricated by the MMIC HBT process has been experimentally investigated. 3-dB bandwidths of 2 GHz and more than 20 GHz have been achieved in a CE (common emitter) HBT and a CB (common base) HBT, respectively. The photoresponse of the CEHBT is approximately 25 dB higher than that of the CBHBT at 1 GHz. The CEHBT has a higher signal-to-noise ratio than a PIN/50- Omega FET amplifier at 10 GHz.<>
Keywords
MMIC; frequency response; heterojunction bipolar transistors; integrated optoelectronics; photodetectors; HBTs; MMIC HBT process; common base; common emitter; frequency response; photodetectors; photoresponse; signal-to-noise ratio; Bandwidth; Cutoff frequency; FETs; Frequency measurement; Frequency response; Gain measurement; Heterojunction bipolar transistors; Optical modulation; Photodetectors; Radio frequency;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.222780
Filename
222780
Link To Document