Title :
Frequency response of HBTs as photodetectors
Author :
Suematsu, Eiji ; Ogawa, Hiroyo
Author_Institution :
ATR Opt. & Radio Commun. Res. Lab., Kyoto, Japan
fDate :
7/1/1993 12:00:00 AM
Abstract :
The frequency response of HBT photodetectors fabricated by the MMIC HBT process has been experimentally investigated. 3-dB bandwidths of 2 GHz and more than 20 GHz have been achieved in a CE (common emitter) HBT and a CB (common base) HBT, respectively. The photoresponse of the CEHBT is approximately 25 dB higher than that of the CBHBT at 1 GHz. The CEHBT has a higher signal-to-noise ratio than a PIN/50- Omega FET amplifier at 10 GHz.<>
Keywords :
MMIC; frequency response; heterojunction bipolar transistors; integrated optoelectronics; photodetectors; HBTs; MMIC HBT process; common base; common emitter; frequency response; photodetectors; photoresponse; signal-to-noise ratio; Bandwidth; Cutoff frequency; FETs; Frequency measurement; Frequency response; Gain measurement; Heterojunction bipolar transistors; Optical modulation; Photodetectors; Radio frequency;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
