Single-transistor-latch-induced degradation of front- and back-channel thin-film SOI transistors

Author

Zhang, Binglong ; Yoshino, Akira ; Ma, Tso-Ping

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

Volume

13

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

282

Lastpage

284

Abstract

The front- and back-channel transistor characteristics in thin-film silicon-on-insulator (SOI) MOSFETs have been studied before and after front-channel hot-carrier stress resulting from single-transistor latch. This stress causes the following significant changes: (a) a reduction of the front-channel current for a given gate voltage, (b) an increase in front-channel drain-source breakdown voltage when measured in the reverse mode, and (c) a decrease in the back-channel transconductance. These changes can be attributed to the hot-carrier induced interface traps on both front and back interfaces near the drain junction.<>

Keywords

hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device testing; semiconductor-insulator boundaries; thin film transistors; Si-SiO/sub 2/; back-channel transconductance; back-channel transistor; front-channel current; front-channel drain-source breakdown voltage; front-channel hot-carrier stress; hot-carrier induced interface traps; single transistor latch induced degradation; subthreshold characteristics; thin film SOI MOSFET; Breakdown voltage; Current measurement; Degradation; Hot carriers; MOSFETs; Semiconductor thin films; Silicon on insulator technology; Stress; Thin film transistors; Voltage measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145054

Filename

145054