Title :
Transistor input parameter variations indicating high-gain frequency multiplication properties
Author :
O´Clock, G.D., Jr.
Abstract :
Transistors exhibiting abrupt input parameter variations with input voltage often yield enhanced frequency multiplication properties. The parameters that can be measured and utilized as high-gain frequency multiplication indicators are discussed.
Keywords :
Atomic measurements; Capacitance; Capacitance-voltage characteristics; Cathodes; Electrodes; Frequency conversion; Frequency measurement; Lenses; Radio frequency; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8613
