Title :
Overlength modes of transferred-electron oscillators
Author :
Jones, D. ; Rees, H.D.
Author_Institution :
Royal Radar Establishment, Great Malvern, UK
Abstract :
Simulations of n+¿n¿n+ GaAs devices show three régimes where the operating frequency substantially exceeds the normal transit frequency. The efficiency/frequency characteristics and the effects of length and carrier density differ from predictions for an idealised I.s.a. mode.
Keywords :
gallium arsenide; microwave oscillators; solid-state microwave devices; transferred electron devices; GaAs; microwave oscillators; overlength modes; transferred electron device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730077
