DocumentCode
921601
Title
Conversion Losses in Schottky-Barrier Diode Mixers in the Submillimeter Region
Author
Kelly, William M. ; Wrixon, Gerard T.
Volume
27
Issue
7
fYear
1979
fDate
7/1/1979 12:00:00 AM
Firstpage
665
Lastpage
672
Abstract
Conversion Iosses, both intrinsic and parasitic, are calculated for Schottky diode mixers in the submillimeter region, and optimum mixer performance is shown to depend strongly upon operating frequency and upon diode diameter. The implications for high-frequency diode fabrication are discussed, and a comparison is made of the expected performance of GaAs, Si, and InSb Schottky diodes at frequencies up to 5 THz.
Keywords
Cutoff frequency; Equivalent circuits; Fabrication; Frequency conversion; Gallium arsenide; Mixers; Radio frequency; Schottky diodes; Spectroscopy; Substrates;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1979.1129698
Filename
1129698
Link To Document