Title :
n- and p-channel m.o.s.f.e.t.s as Rayleigh-surface-wave detectors
Author_Institution :
Thomson-CSF, ASM Division, Cagnes-sur-Mer, France
Abstract :
We have studied the piezoresistance effect in an m.o.s.f.e.t. structure used as a Rayleigh-surface-wave transducer. The investigation was carried out over a large frequency range about a central value of 100 MHz. Results for silicon¿m.o.s.f.e.t. n- and p- channel inversion layers are given.
Keywords :
Rayleigh waves; acoustic surface wave devices; field effect transistors; MOSFET; Rayleigh surface wave detector; piezoresistance effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730092
