DocumentCode
921639
Title
Tungsten masking against boron implantation
Author
Portnoy, W.M. ; Leedy, L.M.
Author_Institution
Texas Technical University, Department of Electrical Engineering, Lubbock, USA
Volume
9
Issue
6
fYear
1973
Firstpage
129
Lastpage
130
Abstract
Electron-beam evaporated and ion-beam sputtered films have been successfully used as masks against high-dosage boron implantation. Evaporated films were found to be somewhat more effective, probably because of their higher density. The predicted value for the required mask thickness was in satisfactory agreement with the experimentally determined value.
Keywords
boron; ion implantation; masks; metallic thin films; silicon; tungsten; B; Si; W metal films; ion implantation; masks;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730095
Filename
4236034
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