Title :
Tungsten masking against boron implantation
Author :
Portnoy, W.M. ; Leedy, L.M.
Author_Institution :
Texas Technical University, Department of Electrical Engineering, Lubbock, USA
Abstract :
Electron-beam evaporated and ion-beam sputtered films have been successfully used as masks against high-dosage boron implantation. Evaporated films were found to be somewhat more effective, probably because of their higher density. The predicted value for the required mask thickness was in satisfactory agreement with the experimentally determined value.
Keywords :
boron; ion implantation; masks; metallic thin films; silicon; tungsten; B; Si; W metal films; ion implantation; masks;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730095
