Title :
Thin-oxide damage from gate charging during plasma processing
Author :
Fang, Sychyi ; McVittie, James P.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
The plasma-induced charge damage to small gate gate MOS capacitors is investigated by using ´antenna´ structures. After an O/sub 2/ plasma step the interface state density increases with increasing antenna area and varies by two orders of magnitude. A hole trapping-induced breakdown mechanism during plasma charging is supported by experimental evidence which includes annealing and polarity effects for charge to breakdown and tunneling currents. In addition, oxide susceptibility is shown to depend on oxide growth conditions and is predictable by negative bias-temperature aging.<>
Keywords :
annealing; electric breakdown of solids; hole traps; interface electron states; metal-insulator-semiconductor devices; sputter etching; tunnelling; MOS capacitors; O/sub 2/ plasma step; annealing; antenna structures; charge to breakdown; gate charging; hole trapping-induced breakdown mechanism; interface state density; negative bias-temperature aging; oxide susceptibility; plasma processing; plasma-induced charge damage; polarity effects; small gate gate; thin oxide damage; tunneling currents; Aging; Antenna measurements; Electric breakdown; MOS capacitors; Plasma applications; Plasma density; Plasma materials processing; Plasma measurements; Surface discharges; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
