Title :
Self-heating and gate leakage current in a guarded MOSFET
Author :
Negro, V.C. ; Pannone, L.
fDate :
3/1/1972 12:00:00 AM
Abstract :
Gate leakage current measurements of a guarded MOSFET show that device self-heating has a marked effect on the Schottky emission current. This effect can make the bias conditions for zero gate leakage current very sensitive to changes in drain voltage.
Keywords :
Cutoff frequency; Digital filters; Leakage current; MOSFET circuits; Sampling methods; Steady-state; Temperature; Testing; Transfer functions; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8640
