• DocumentCode
    921773
  • Title

    Self-heating and gate leakage current in a guarded MOSFET

  • Author

    Negro, V.C. ; Pannone, L.

  • Volume
    60
  • Issue
    3
  • fYear
    1972
  • fDate
    3/1/1972 12:00:00 AM
  • Firstpage
    342
  • Lastpage
    343
  • Abstract
    Gate leakage current measurements of a guarded MOSFET show that device self-heating has a marked effect on the Schottky emission current. This effect can make the bias conditions for zero gate leakage current very sensitive to changes in drain voltage.
  • Keywords
    Cutoff frequency; Digital filters; Leakage current; MOSFET circuits; Sampling methods; Steady-state; Temperature; Testing; Transfer functions; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1972.8640
  • Filename
    1450570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=921773