Title :
First MOS transistors on insulator by silicon saturated liquid solution epitaxy
Author :
Zingg, R.P. ; Nagel, N. ; Bergmann, R. ; Bauser, E. ; Höfflinger, B. ; Queisser, H.J.
Author_Institution :
Inst. for Microelectron., Stuttgart, Germany
fDate :
5/1/1992 12:00:00 AM
Abstract :
Field-effect transistors have been built for the first time in silicon-on-insulator (SOI) films generated by liquid phase epitaxy from indium solutions. These silicon films grew up to 120 mu m laterally with a thickness of 3 mu m, yielding aspect ratios of 40:1 without any planarization. Thus the process holds promise for a simplified, low-cost SOI technology. The devices confirm moderate concentration of incorporated solvent atoms and exhibit interface-state densities at typical levels for
Keywords :
carrier mobility; insulated gate field effect transistors; interface electron states; liquid phase epitaxial growth; semiconductor growth; semiconductor-insulator boundaries; MOS transistors; SOI transistors; Si-SiO/sub 2/; aspect ratios; carrier mobilities; compensation implants; complementary devices; enhancement/depletion transistors; interface-state densities; liquid phase epitaxy; low threshold voltage; saturated liquid solution epitaxy; Dielectric liquids; Epitaxial growth; FETs; Indium; Insulation; MOSFETs; Planarization; Semiconductor films; Silicon on insulator technology; Solvents;
Journal_Title :
Electron Device Letters, IEEE
