Title :
Short-pulse modulation of gallium-arsenide lasers with TRAPATT diodes
Author :
Carroll, J.E. ; Farrington, J.G.
Author_Institution :
University of Cambridge, Engineering Department, Cambridge, UK
Abstract :
TRAPATT diodes producing current pulses with a halfwidth of 150 ps at a repetition rate around 1 GHz have been used to modulate successfully a double-heterostructure gallium-arsenide laser.
Keywords :
avalanche diodes; gallium arsenide; laser accessories; optical modulation; pulse modulation; semiconductor lasers; solid-state microwave devices; transit time devices; 1 GHZ; GaAs; avalanche diodes; double heterostructure; optical modulation; pulse modulation; semiconductor lasers; transit-time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730123
