Title :
BiCMOS emerges for gate-arrays and memories
Author :
Iranmanesh, Ali ; Bastani, Bami
fDate :
3/1/1992 12:00:00 AM
Abstract :
The integration of CMOS and bipolar technologies for applications involving gate-arrays, memories, and mixed-signal tasks is described. The specific features of bipolar and CMOS devices are reviewed, and the ways in which the best of these characteristics can be combined in BiCMOS ICs are discussed. Future trends in the applications of BiCMOS technology are discussed.<>
Keywords :
BIMOS integrated circuits; integrated circuit technology; integrated memory circuits; logic arrays; BiCMOS ICs; gate-arrays; memories; mixed-signal tasks; monolithic IC; BiCMOS integrated circuits; Bipolar transistors; CMOS memory circuits; CMOS process; CMOS technology; Energy consumption; Fabrication; Integrated circuit technology; MOSFETs; Transconductance;
Journal_Title :
Circuits and Devices Magazine, IEEE
