DocumentCode
921936
Title
BiCMOS emerges for gate-arrays and memories
Author
Iranmanesh, Ali ; Bastani, Bami
Volume
8
Issue
2
fYear
1992
fDate
3/1/1992 12:00:00 AM
Firstpage
14
Lastpage
17
Abstract
The integration of CMOS and bipolar technologies for applications involving gate-arrays, memories, and mixed-signal tasks is described. The specific features of bipolar and CMOS devices are reviewed, and the ways in which the best of these characteristics can be combined in BiCMOS ICs are discussed. Future trends in the applications of BiCMOS technology are discussed.<>
Keywords
BIMOS integrated circuits; integrated circuit technology; integrated memory circuits; logic arrays; BiCMOS ICs; gate-arrays; memories; mixed-signal tasks; monolithic IC; BiCMOS integrated circuits; Bipolar transistors; CMOS memory circuits; CMOS process; CMOS technology; Energy consumption; Fabrication; Integrated circuit technology; MOSFETs; Transconductance;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.127308
Filename
127308
Link To Document