Title :
High-power high-efficiency operation of read-type IMPATT-diode oscillators
Author :
Kim, Chong-Kwon ; Steele, R. ; Bierig, R.
Author_Institution :
Raytheon Company, Special Microwave Devices Operation, Waltham, USA
Abstract :
C.W. operation of GaAs Schottky-barrier Read-type IMPATT-diode oscillators is reported. These devices exhibited efficiences from 20 to 24% with output powers of 2 ~ 3 W c.w. in the Ku-band. The best efficiency was 24%, with an output power of 1.8 W c.w., while the maximum output power was 3.2 W c.w., with an efficiency of 20.7% at frequencies near 14 GHz.
Keywords :
IMPATT diodes; Schottky-barrier diodes; gallium arsenide; microwave oscillators; solid-state microwave devices; 14 GHZ; 3.2 W; CW operation; GaAs; IMPATT diodes; Ku-band; Read type devices; Schottky barrier diodes; microwave oscillators; solid state microwave circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730128
