Title :
The influence of diffusion on the stability of the supercritical transferred electron amplifier
Author :
Jeppesen, P. ; Jeppsson, B.
fDate :
4/1/1972 12:00:00 AM
Abstract :
The influence of the diffusion coefficient-electric field characteristic on the stability of the supercritical n-GaAs transferred electron amplifier (TEA) with ohmic contacts is investigated in computer simulations. Typical effects of doping profile, bias voltage, and temperature are considered. For a 10-µm 5-Ω TEA, a negative input conductance in the 7-31- GHz range is computed along with a corresponding 37-GHz voltage gain 3-dB bandwidth product in a 50-Ω circuit.
Keywords :
Accuracy; Acoustic waveguides; Boundary conditions; Differential equations; Eigenvalues and eigenfunctions; Electrons; Frequency; Moment methods; Stability; Tellurium;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8660
