DocumentCode
922010
Title
The influence of diffusion on the stability of the supercritical transferred electron amplifier
Author
Jeppesen, P. ; Jeppsson, B.
Volume
60
Issue
4
fYear
1972
fDate
4/1/1972 12:00:00 AM
Firstpage
452
Lastpage
454
Abstract
The influence of the diffusion coefficient-electric field characteristic on the stability of the supercritical n-GaAs transferred electron amplifier (TEA) with ohmic contacts is investigated in computer simulations. Typical effects of doping profile, bias voltage, and temperature are considered. For a 10-µm 5-Ω TEA, a negative input conductance in the 7-31- GHz range is computed along with a corresponding 37-GHz voltage gain 3-dB bandwidth product in a 50-Ω circuit.
Keywords
Accuracy; Acoustic waveguides; Boundary conditions; Differential equations; Eigenvalues and eigenfunctions; Electrons; Frequency; Moment methods; Stability; Tellurium;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1972.8660
Filename
1450590
Link To Document