DocumentCode :
922010
Title :
The influence of diffusion on the stability of the supercritical transferred electron amplifier
Author :
Jeppesen, P. ; Jeppsson, B.
Volume :
60
Issue :
4
fYear :
1972
fDate :
4/1/1972 12:00:00 AM
Firstpage :
452
Lastpage :
454
Abstract :
The influence of the diffusion coefficient-electric field characteristic on the stability of the supercritical n-GaAs transferred electron amplifier (TEA) with ohmic contacts is investigated in computer simulations. Typical effects of doping profile, bias voltage, and temperature are considered. For a 10-µm 5-Ω TEA, a negative input conductance in the 7-31- GHz range is computed along with a corresponding 37-GHz voltage gain 3-dB bandwidth product in a 50-Ω circuit.
Keywords :
Accuracy; Acoustic waveguides; Boundary conditions; Differential equations; Eigenvalues and eigenfunctions; Electrons; Frequency; Moment methods; Stability; Tellurium;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1972.8660
Filename :
1450590
Link To Document :
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