Title :
Double-drift millimetre-wave IMPATT diodes prepared by epitaxial growth
Author :
Watts, B.E. ; Howard, Ayanna M. ; Gibbons, G.
Author_Institution :
Plessey Company Ltd., Allen Clark Research Centre, Towcester, UK
Abstract :
The preparation of silicon double-drift millimetre-wave IMPATT diodes by the epitaxial growth of n- and p-type layers successively on n-type substrates is described. Carrier-concentration profiles comparable with those reported for double layers formed by ion implantation are obtained; a microwave output power of 560 mW with 11% efficiency has been achieved at 48 GHz.
Keywords :
IMPATT diodes; epitaxial growth; semiconductor device manufacture; solid-state microwave devices; 48 GHZ; IMPATT diodes; carrier concentration profiles; double drift devices; epitaxial growth; ion implantation; semiconductor devices manufacture; solid state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730135
