DocumentCode :
922033
Title :
A high-speed bulk semiconductor microwave switch utilizing GaAs1-xPxmixed crystals
Author :
Pearson, G.L.
Volume :
60
Issue :
4
fYear :
1972
fDate :
4/1/1972 12:00:00 AM
Firstpage :
456
Lastpage :
457
Abstract :
A new microwave switching device in which the switching time is limited only by electronic scattering events within the bulk semiconductor is described. When biased beyond threshold, the bulk GaAs0.7P0.3device exhibits an increase in resistance resulting in microwave switching in less than 200 ps.
Keywords :
Electric resistance; Electromagnetic heating; Electron mobility; Gallium arsenide; Impedance; Microwave devices; P-i-n diodes; Power semiconductor switches; Scattering; Semiconductor diodes;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1972.8663
Filename :
1450593
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=922033
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