DocumentCode
922061
Title
AgSn cathode contact in gallium-arsenide transferred-electron devices
Author
Wasse, M.P. ; Clark, B.W. ; Conlon, R.F.B.
Author_Institution
Standard Telecommunication Laboratories Ltd., Harlow, UK
Volume
9
Issue
10
fYear
1973
Firstpage
189
Lastpage
190
Abstract
Simple observations of the temperature dependence of the threshold current of AgSn-contacted gallium-arsenide transferred-electron devices are interpreted in terms of Schottky-barrier cathodes. From the measurements, the barrier heights are deduced and a mechanism is suggested for their formation. The consequences of the presence of the barrier on the operation of oscillators and amplifiers are discussed and illustrated by experimental results.
Keywords
Schottky effect; cathodes; semiconductor-metal boundaries; silver alloys; transferred electron devices; Ag; GaAs; Schottky effect; Sn; amplifiers; cathodes; electrical contacts; oscillators; transferred electron devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730139
Filename
4236081
Link To Document