• DocumentCode
    922062
  • Title

    Simulation of Nonlinear Microwave FET Performance Using a Quasi-Static Model

  • Author

    Rauscher, Christen ; Willing, Harry A.

  • Volume
    27
  • Issue
    10
  • fYear
    1979
  • fDate
    10/1/1979 12:00:00 AM
  • Firstpage
    834
  • Lastpage
    840
  • Abstract
    A technique is described for accurately predicting nonlinear performance of microwave GaAs field-effect transistors in arbitrary circuit embedding. The approach is based on a quasi-static device model which is derived from measured bias and frequency dependence of the small-signal device S parameters. Excellent agreement is demonstrated between experimental and predicted "load-pull" characteristics at X band.
  • Keywords
    Circuit simulation; Diodes; Frequency; Gallium arsenide; Microwave FETs; Microwave devices; Microwave oscillators; Microwave technology; Microwave theory and techniques; Notice of Violation;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1979.1129744
  • Filename
    1129744
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=922062