Title :
High-efficiency operation of GaAs Schottky-barrier IMPATTs
Author :
Ho-Chung Huang ; Levine, P.A. ; Gobat, A.R. ; Klatskin, J.B.
fDate :
4/1/1972 12:00:00 AM
Abstract :
CW GaAs Schottky-barrier IMPATT oscillators have been fabricated using nichrome as the barrier metal. Several of the oscillators exhibited CW efficiencies ranging from 15 percent to 17.5 percent in C and X band. The best result was 19-percent efficiency in X band from an oscillator which produced 700 mW of output power. Noise performance which is comparable to those of transferred electron oscillators and reflex klystrons has also been observed.
Keywords :
Buffer layers; Circuits; Frequency; Gallium arsenide; Heat sinks; Injection-locked oscillators; Noise measurement; Schottky diodes; Substrates; Threshold current;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8670
