DocumentCode
922378
Title
An Ultra-Low Noise Microwave Synthesizer
Author
Alley, Gary D. ; Wang, Han-Chiu
Volume
27
Issue
12
fYear
1979
fDate
12/1/1979 12:00:00 AM
Firstpage
969
Lastpage
974
Abstract
A silicon bipolar transistor together with a barium titanate dielectric resonator were used to design a low noise microwave synthesizer. The oscillator was phase locked to a low-frequency (LF) reference with microwave frequency selection provided by a high-speed digital programmable divider within the phase-locked loop. The resulting FM noise Delta frms was 0.0003 Hz in a 1-Hz band greater than 1000 Hz from the 1-GHz carrier.
Keywords
Barium; Bipolar transistors; Dielectrics; Low-frequency noise; Microwave frequencies; Microwave oscillators; Phase locked loops; Silicon; Synthesizers; Titanium compounds;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1979.1129775
Filename
1129775
Link To Document